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MRF9085LR3

Part No MRF9085LR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 880MHZ NI-780 / RF Mosfet 26 V 700 mA 880MHz 17.9dB 90W NI-780H-2L
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 880MHz
Gain 17.9dB
Voltage - Test 26 V
Current - Test 700 mA
Power - Output 90W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case SOT-957A
Supplier Device Package NI-780H-2L
Base Product Number MRF90
Standard Package 250 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 928103-MRF9085LR3
Ultra Librarian 3D Model Ultra Librarian MRF9085LR3 CAD Model

Description

Product Overview: MRF9085LR3

The MRF9085LR3 is a high-performance RF power LDMOS transistor designed and manufactured by the renowned semiconductor company, NXP Semiconductors. This device is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 865 to 960 MHz. The versatility of the MRF9085LR3 makes it an ideal choice for a variety of RF energy applications including but not limited to, broadcast transmitters, cellular base stations, and RF heating.

Key Features

  • Frequency Range: The MRF9085LR3 operates effectively over a broad frequency range of 865-960 MHz, making it suitable for a wide array of RF applications.
  • High Output Power: With its high output power capability, this LDMOS transistor can deliver an impressive 85W of continuous wave power, ensuring robust performance for demanding applications.
  • High Gain: It comes with a high gain of 18 dB, which ensures that the signal is amplified significantly without the need for additional stages.
  • High Efficiency: The MRF9085LR3 is designed to offer high efficiency, minimizing power losses and ensuring cost-effective operation in the long run.
  • Integrated ESD Protection: The device includes integrated ESD protection which enhances its reliability and longevity by safeguarding it against electrostatic discharge events.
  • Thermal Performance: Excellent thermal performance is ensured by the device's advanced package design, which helps in maintaining stability and performance over a wide temperature range.
  • Ruggedness: Its rugged design allows the MRF9085LR3 to withstand high mismatch stress, making it a durable choice for various applications.

Applications

The MRF9085LR3 is ideal for applications that require high power, wide bandwidth, and high efficiency. It is commonly used in:

  • RF Power Amplifiers for Broadcast Transmitters
  • Cellular Base Station Amplifiers
  • Industrial, Scientific, and Medical (ISM) Band Applications
  • RF Heating and Plasma Generation
  • Large Signal, Broadband RF Power Applications

Overall, the MRF9085LR3 from NXP Semiconductors represents a reliable and efficient solution for designers looking to optimize their RF applications with a power transistor that delivers exceptional performance across a range of conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.5629 $62.5629
3+ $51.3340 $154.0020
4+ $49.7297 $198.9188
5+ $48.1254 $240.6270
7+ $46.5211 $325.6477
9+ $41.7094 $375.3846
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 164 pieces
Order Increment : 1 pcs
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