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MRFG35010

Part No MRFG35010
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 15V 3.55GHZ NI360HF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tube
Product Status Obsolete
Technology pHEMT FET
Frequency 3.55GHz
Gain 10dB
Voltage - Test 12 V
Current - Test 130 mA
Power - Output 9W
Voltage - Rated 15 V
Mounting Type Chassis Mount
Package / Case NI-360HF
Supplier Device Package NI-360HF
Base Product Number MRFG35
Standard Package 20 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 644278-MRFG35010
Ultra Librarian 3D Model Ultra Librarian MRFG35010 CAD Model

Description

The NXP MRFG35010 is a cutting-edge radio frequency (RF) power LDMOS transistor that is part of NXP's high-performance product lineup. This transistor is specifically designed to deliver outstanding performance in high-frequency applications, making it an ideal choice for a wide range of RF energy solutions.

Key Features:

  • Frequency Range: The MRFG35010 operates effectively over a wide frequency range, catering to various RF applications.
  • High Power: It is capable of delivering high power, which is essential for applications requiring robust output signals.
  • Efficiency: This transistor is engineered for maximum efficiency, ensuring minimal power loss during operation and reducing energy consumption.
  • Thermal Performance: The MRFG35010 is well-known for its excellent thermal performance, which contributes to its reliability and longevity.
  • Durability: Fabricated with high-quality materials, this device is built to withstand the rigors of demanding RF environments.

Applications:

The versatility of the NXP MRFG35010 allows it to be used in a variety of applications, including but not limited to:

  • Industrial, scientific, and medical (ISM) applications.
  • Radio and VHF TV broadcast transmitters.
  • Aerospace and defense communication systems.
  • High-power RF amplifiers.

Technical Specifications:

With its advanced LDMOS technology, the MRFG35010 transistor provides robust performance with the following technical specifications:

  • Output Power: Specified at a certain wattage level for optimal performance.
  • Gain: High gain figures ensure signal strength and quality.
  • Efficiency: Optimized for maximum energy conversion.
  • Operating Voltage: Compatible with standard power supplies, allowing for easy integration into existing systems.

The MRFG35010 by NXP is a testament to the company's commitment to delivering high-quality RF components that push the boundaries of innovation and efficiency. Whether for commercial or industrial use, this transistor is a reliable choice for any high-frequency power amplification needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.6345 $82.9035
6+ $22.6750 $136.0500
8+ $21.9669 $175.7352
11+ $21.2578 $233.8358
15+ $20.5498 $308.2470
19+ $18.4234 $350.0446
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Availability: 8,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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