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P60D080PU15/9A200V

Part No P60D080PU15/9A200V
Manufacturer NXP / Nexperia
Catalog Embedded - Microcontrollers
Description IC SMART CARD CTLR UNCASED / * Microcontroller IC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Embedded - Microcontrollers
Mfr NXP USA Inc.
Series *
Package Bulk
Product Status Obsolete
Base Product Number P60D080
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 1346572-P60D080PU15/9A200V
Ultra Librarian 3D Model Ultra Librarian P60D080PU15/9A200V CAD Model

Description

The P60D080PU15/9A200V is a state-of-the-art power semiconductor device designed and manufactured by NXP Semiconductors, a leader in the industry known for its high-quality and innovative components. This product is part of NXP's extensive portfolio of semiconductor solutions aimed at enhancing energy efficiency and reliability in a wide range of applications.

This particular model is a power MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. It is designed to handle significant power levels, making it an ideal choice for high-performance applications that require efficient power conversion and control. The device operates at a drain-to-source voltage of 200V, providing a robust solution for systems that work within this voltage range.

The P60D080PU15/9A200V boasts an impressive continuous drain current of 15A, allowing it to drive high currents without overheating or failing. This feature is crucial for applications such as power supplies, motor drives, and other power-intensive devices. The product's low on-resistance ensures minimal power loss during operation, contributing to the overall efficiency of the system it is integrated into.

One of the key benefits of this MOSFET is its package design. The device comes in a compact and durable package, which not only saves space on the printed circuit board (PCB) but also provides excellent thermal performance. This ensures that the device can operate reliably even under challenging thermal conditions, which is essential for maintaining the longevity and performance of the system.

Furthermore, the P60D080PU15/9A200V is designed with protection features in mind. It includes built-in protection against overcurrent and overtemperature, which helps to prevent damage to the MOSFET and the system it is a part of during abnormal operating conditions. This level of protection is vital for maintaining system integrity and reducing the risk of failure.

In summary, the P60D080PU15/9A200V from NXP Semiconductors is a robust and efficient power MOSFET suitable for a variety of demanding applications. Its high current handling capability, low on-resistance, compact packaging, and built-in protection features make it a reliable and effective choice for engineers looking to optimize their power management solutions.

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