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PDTC123ET

Part No PDTC123ET
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW TO236AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 095974-PDTC123ET
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC123ET CAD Model

Description

Product Overview: PDTC123ET - NXP

The PDTC123ET from NXP Semiconductors is a robust, high-performance NPN bipolar digital transistor housed in a small surface-mounted device (SMD) package. This transistor is specifically designed to meet the needs of automated mass production, offering a compact solution for digital control in various electronic applications.

Key Features

  • Integrated Bias Resistor: The PDTC123ET comes with a built-in bias resistor network, simplifying circuit design by reducing component count and saving board space. This feature also ensures consistent performance and simplifies the biasing of the transistor, which is crucial for stable operation.
  • Surface-Mount Package: Encased in a SOT-23 package, this transistor is ideal for high-density PCB designs. The small footprint allows for efficient use of board space, making it perfect for portable and space-constrained applications.
  • High Current Gain: With a high current gain (hFE), this transistor can control large currents with a relatively small base current, making it suitable for amplifying or switching applications where power efficiency is crucial.
  • Low Saturation Voltage: The PDTC123ET exhibits low collector-emitter saturation voltage, which translates to reduced power dissipation and improved energy efficiency, especially important in battery-powered devices.

Applications

The PDTC123ET is versatile and can be used in a wide range of applications, including but not limited to:

  • Switching loads in portable electronics
  • Driver circuits for relays and LEDs
  • Power management in complex circuits
  • Signal processing applications
  • Interface circuits between microcontrollers and other digital systems

Technical Specifications

Parameter Value
Package SOT-23
Configuration Single NPN
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA
Power Dissipation (Pd) 200 mW
Operating Temperature Range -55°C to +150°C

In conclusion, the PDTC123ET transistor is an excellent choice for designers looking for a reliable, high-performance switching or amplification solution. With its integrated bias resistors, low saturation voltage, and high current gain, it is well-suited to meet the stringent requirements of modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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