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PEMD18

Part No PEMD18
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 100mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 042094-PEMD18
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMD18 CAD Model

Description

The NXP PEMD18 is a state-of-the-art, high-efficiency dual PNP transistor designed to meet the needs of modern compact electronic applications. This product is a testament to NXP's commitment to providing innovative semiconductor solutions that enhance the performance and efficiency of electronic devices.

Key Features:

  • Low VCEsat: The PEMD18 boasts a low collector-emitter saturation voltage, which minimizes power loss and improves overall energy efficiency during operation.
  • Dual PNP Transistors: The integration of two PNP transistors in one package allows for a reduction in board space and simplifies the circuit design process.
  • High Current Capability: With a high maximum continuous collector current, the PEMD18 is capable of handling significant power levels, making it suitable for a wide range of applications.
  • Surface-Mount Package: The product comes in a small, leadless surface-mount package, which is ideal for space-constrained applications and enables easy integration into automated manufacturing processes.

Applications:

The versatile nature of the NXP PEMD18 allows it to be used in various applications, including but not limited to:

  • Switching circuits
  • Power management systems
  • Signal processing
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits

Technical Specifications:

Some of the technical specifications of the PEMD18 include a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -100mA, and a power dissipation (PD) of 250mW. The device also features high collector current gain (hFE), ensuring reliable operation even in high gain applications.

Quality and Reliability:

NXP is known for its rigorous quality control and the PEMD18 is no exception. This product is built to the highest standards, ensuring long-term reliability and performance in even the most demanding environments.

For detailed product specifications, application notes, and support resources, please refer to the official NXP datasheets and product documentation available on the NXP website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
895+ $0.0647 $57.9065
2,175+ $0.0531 $115.4925
3,335+ $0.0520 $173.4200
4,655+ $0.0497 $231.3535
5,955+ $0.0485 $288.8175
7,895+ $0.0439 $346.5905
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Availability: 10,500 pieces
MOQ: 895 pcs
Order Increment : 1 pcs
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