The NXP PEMD16 is a state-of-the-art, low VCEsat (collector-emitter saturation voltage) Breakthrough In Small Signal (BISS) transistor, designed to deliver high efficiency and performance for a wide range of applications. This innovative component combines the low input capacitance and high switching speeds of a standard MOSFET with the robustness and low saturation voltage of a bipolar transistor.

Key Features

• Low Collector-Emitter Saturation Voltage: The PEMD16 boasts a very low collector-emitter saturation voltage, which significantly reduces power loss and improves overall efficiency, making it ideal for power management applications.
• High Collector Current Capability: With a high collector current capacity, this transistor can handle significant currents, offering better performance in power-intensive applications.
• Fast Switching Speed: The device's fast switching speed ensures minimal transition losses and is perfect for high-frequency switching applications.
• Reduction of Component Count: The integration of two transistors in one package allows for a reduction in the number of components required in a circuit, simplifying design and saving space.
• Dual PNP Transistors: The PEMD16 contains two PNP transistors, providing a matched pair for applications requiring closely matched transistor parameters.

Applications

The NXP PEMD16 is versatile and can be used in a variety of applications. Its characteristics make it particularly suitable for:

• Switching regulators and DC-DC converters
• Power management circuits
• Load switches
• Motor control circuits
• LED drivers
• Charge pumps

Technical Specifications

This transistor offers a maximum collector-emitter voltage (VCEO) of 15V, a collector current of up to 100mA, and a low collector-emitter saturation voltage, which varies depending on the collector current but typically remains below 0.3V. Its compact SOT-363 package ensures minimal footprint on PCBs.

The NXP PEMD16 is an excellent choice for designers looking for a reliable, high-performance low VCEsat transistor that can enhance the efficiency and reduce the size of their electronic circuits.