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PH1955L

Part No PH1955L
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1237186-PH1955L
Manufacturer Homepage www.nxp.com
Family Name PH1955L
Introduction Date July 27, 2005
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH1955L CAD Model

Description

The PH1955L is a high-performance, low-voltage power MOSFET produced by NXP Semiconductors, a leader in the design and manufacturing of advanced semiconductor solutions. This product is specifically designed to meet the energy efficiency and reliability demands of modern electronic applications.

Key Features

  • Low On-Resistance: The PH1955L features an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is well-suited for high-frequency power conversion systems, enabling efficient operation and reduced switching losses.
  • Low Threshold Voltage: A low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage control circuits and reducing power consumption.
  • Enhanced Thermal Performance: The PH1955L is encapsulated in a robust package designed to enhance thermal dissipation, ensuring reliable operation even under high temperature conditions.

Applications

The PH1955L is ideal for a wide range of applications where power efficiency and reliability are critical. These include:

  • DC/DC converters
  • Power management modules
  • Motor control circuits
  • Switch-mode power supplies (SMPS)
  • Battery-powered devices
  • Load switches

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 20 V Continuous Drain Current (I<sub>D) 3.1 A Power Dissipation (P<sub>D) 1.25 W Operating Temperature Range -55°C to +150°C

In conclusion, the PH1955L from NXP Semiconductors is a versatile and robust power MOSFET that offers outstanding performance for a variety of power applications. Its low on-resistance, high-speed switching, and excellent thermal properties make it a top choice for designers looking to optimize their power systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3696 $59.1360
385+ $0.3038 $116.9630
590+ $0.2945 $173.7550
815+ $0.2841 $231.5415
1,055+ $0.2749 $290.0195
1,405+ $0.2472 $347.3160
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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