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PH3330L,115

Part No PH3330L,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 30.5nC @ 4.5V
Max Input Capacitance 4840pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 347560-PH3330L,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH3330L,115 CAD Model

Description

The PH3330L,115 is a high-performance, N-channel TrenchMOS™ logic level FET designed and manufactured by NXP Semiconductors. This field-effect transistor is a testament to NXP's commitment to providing advanced solutions for power management and switching applications. With its logic level gate drive, this FET is optimized for use in modern electronic circuits that require efficient power control and low voltage operation.

Key Features

  • Low Threshold Voltage: The PH3330L,115 features a low threshold voltage that allows it to be driven by logic-level voltages, making it compatible with microcontroller outputs and other digital circuits.
  • High-Speed Switching: Designed for fast switching applications, this FET can handle high frequencies, which is crucial for power supplies, converters, and other demanding applications.
  • Low On-State Resistance: With its TrenchMOS technology, it offers a very low on-state resistance (Rds(on)), minimizing power losses and improving overall efficiency.
  • High Power Efficiency: The device's low conduction losses contribute to a higher power efficiency, making it ideal for power-sensitive designs.
  • Robust Performance: The PH3330L,115 is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliable operation under tough conditions.

Applications

The versatility of the PH3330L,115 allows it to be used in a wide range of applications. It is particularly well-suited for use in:

  • DC/DC converters
  • Power management circuits
  • Motor control systems
  • Load switches
  • Power factor correction (PFC) circuits

Product Specifications

Parameter Value Package SOT-223 Drain-Source Voltage (Vds) 30V Continuous Drain Current (Id) 100A Power Dissipation (Pd) 43W Operating Temperature Range -55°C to +175°C

In conclusion, the PH3330L,115 from NXP Semiconductors is a robust and efficient solution for a variety of power control applications where logic level gate drive and high-performance switching are required. Its low on-state resistance and ability to operate at logic-level voltages make it a preferred choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5937 $61.5307
26+ $4.5900 $119.3400
39+ $4.4456 $173.3784
54+ $4.3024 $232.3296
70+ $4.1592 $291.1440
93+ $3.7295 $346.8435
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Availability: 1,580 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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