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PHB110NQ06LT,118

Part No PHB110NQ06LT,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 45nC @ 5V
Max Input Capacitance 3960pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 004335-PHB110NQ06LT,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PHB110NQ06LT,118 CAD Model

Description

The PHB110NQ06LT,118 is a robust N-channel, logic level, enhancement-mode Field-Effect Transistor (FET) produced by NXP Semiconductors. Designed to deliver high performance in power management tasks, this MOSFET is part of NXP's portfolio of low-threshold, high-efficiency power devices. It is commonly used in a variety of applications, including switch-mode power supplies, DC-DC converters, motor drives, and other power-related applications.

Key Features

  • Low Threshold Voltage: The device features a low gate threshold voltage, making it compatible with logic-level drive signals and suitable for low-voltage applications.
  • High-Speed Switching: With its fast switching capabilities, the PHB110NQ06LT,118 can efficiently handle high-frequency operations, contributing to the reduction of switching losses.
  • Low On-State Resistance: A low RDS(on) minimizes conduction losses and enhances overall efficiency, making this MOSFET ideal for high-efficiency power designs.
  • Robust Thermal Performance: The device's package is engineered for excellent thermal conduction, ensuring reliable operation even under high power and temperature conditions.
  • High Continuous Drain Current: It is capable of supporting a high continuous drain current, facilitating the handling of high current loads.

Applications

The versatility of the PHB110NQ06LT,118 allows it to be integrated into a wide array of power management systems. Its primary applications include:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor control circuits
  • Power management for computers and servers
  • Automotive applications

Product Specifications

The PHB110NQ06LT,118 boasts a comprehensive set of specifications that make it a highly capable component for power regulation. Some of its specifications include a drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 110A, and a power dissipation (Pd) of 156W. The product comes in a TO-263 (D2PAK) package, ensuring compatibility with standard PCB layouts and easy integration into existing designs.

With its combination of high efficiency, fast switching, and robust thermal management, the PHB110NQ06LT,118 from NXP Semiconductors represents a reliable choice for designers looking to optimize power performance in their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,800 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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