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NTHS2101PT1

Part No NTHS2101PT1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 5.4A CHIPFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 30nC @ 4.5V
Max Input Capacitance 2400pF @ 6.4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 5.4A, 4.5V
Mounting SMD (SMT)
Case / Package ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 128644-NTHS2101PT1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHS2101PT1 CAD Model

Description

The NTHS2101PT1 from ON Semiconductor is a high-performance, dual P-Channel MOSFET designed for a variety of applications requiring efficient power management and high-speed switching. This device features two independent P-Channel transistors in a single compact package, making it an ideal choice for space-constrained designs.

Key Features:

  • Low On-Resistance: The NTHS2101PT1 boasts a low on-resistance, which reduces power loss and improves overall efficiency in circuit operation. This feature is particularly beneficial in applications where power conservation is critical.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is suitable for high-frequency applications. Its rapid switching capability ensures minimal transition losses and better performance in power conversion and regulation circuits.
  • Dual P-Channel Configuration: The dual P-Channel layout enables the use of a single device instead of multiple transistors, saving board space and simplifying circuit design.
  • Low Threshold Voltage: A low threshold voltage allows for operation at lower gate drive voltages, which can be advantageous in low-voltage applications and helps to reduce power consumption.
  • Thermal Management: The MOSFET is encapsulated in a small footprint TSOP-6 package, which offers excellent thermal performance and aids in maintaining device reliability and longevity under varying operating conditions.

Applications:

  • Power Management in Portable Devices
  • DC/DC Converters
  • Battery Management Systems
  • Load Switching
  • Motor Control Circuits

The NTHS2101PT1 is a testament to ON Semiconductor's commitment to providing innovative power management solutions. Its combination of low on-resistance, high-speed switching, and dual-channel configuration makes it a versatile component for a wide range of electronic devices, from portable gadgets to industrial automation systems. Whether you're designing a sophisticated mobile device or a robust power supply unit, the NTHS2101PT1 offers the reliability and performance you need to elevate your project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7441 $61.0435
85+ $1.4310 $121.6350
125+ $1.3860 $173.2500
175+ $1.3421 $234.8675
225+ $1.2971 $291.8475
300+ $1.1631 $348.9300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,560 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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