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PHB143NQ04T,118

Part No PHB143NQ04T,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087775-PHB143NQ04T,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB143NQ04T,118 CAD Model

Description

The PHB143NQ04T,118 is a state-of-the-art N-channel TrenchMOS™ standard level field-effect transistor produced by NXP Semiconductors, a leader in the electronic components industry. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, including switching regulators, switching converters, motor drivers, relay drivers, and load-switching circuits.

Key Features

  • Low On-State Resistance: The device boasts an extremely low on-state resistance (R<sub>DS(on)) which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: With its fast switching capabilities, the PHB143NQ04T,118 is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion.
  • Robust Thermal Performance: The MOSFET is encapsulated in a TO-263 (D2PAK) package, which provides excellent thermal conduction and heat dissipation, allowing for stable operation at higher temperatures.
  • High Continuous Current: It is capable of handling a high continuous drain current, making it suitable for demanding power applications.
  • Low Threshold Voltage: The device features a low threshold voltage, which facilitates driving the MOSFET at lower gate voltages and reduces power consumption in the driving circuit.
  • Avalanche Rated: Engineered to be avalanche rated, it ensures robustness and reliability under harsh conditions, such as unexpected voltage spikes.

Applications

The versatility of the PHB143NQ04T,118 allows it to be integrated into various electronic systems. Its primary applications include:

  • DC/DC converters
  • Power management circuits
  • Automotive applications
  • High-efficiency switching power supplies
  • Motor control circuits

Summary

The NXP PHB143NQ04T,118 MOSFET is an exceptional component that combines performance, efficiency, and reliability. Its low on-state resistance, high-speed switching, and robust thermal management make it an ideal choice for designers looking to optimize their power systems. Whether for automotive, industrial, or consumer electronics, this MOSFET can significantly enhance system performance while maintaining energy efficiency.

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