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PHD55N03LTA

Part No PHD55N03LTA
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 55A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 273909-PHD55N03LTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD55N03LTA CAD Model

Description

Product Overview: NXP PHD55N03LTA

The NXP PHD55N03LTA is a robust TrenchMOS™ silicon technology-based N-channel enhancement-mode Field-Effect Transistor (FET) designed for high-speed switching applications. This semiconductor device is a part of NXP's extensive portfolio of power MOSFETs that offer superior performance in terms of switching speed, thermal performance, and overall efficiency.

Key Features

  • Low On-State Resistance: The PHD55N03LTA boasts a remarkably low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET is capable of operating at high frequencies, making it suitable for power supply and DC-DC converter applications.
  • High Thermal Performance: With an excellent thermal design, the PHD55N03LTA can handle higher currents and dissipate heat effectively, ensuring reliability even in demanding conditions.
  • Logic Level Compatible: It can be driven directly from logic level voltages, simplifying the gate drive requirements and making it compatible with a wide range of control circuits.

Applications

The NXP PHD55N03LTA is versatile and can be used in various applications, including:

  • DC/DC converters
  • Switch-mode power supplies (SMPS)
  • Motor control circuits
  • Automotive systems
  • Power management solutions

Product Specifications

The PHD55N03LTA has a drain-source voltage (V<sub>DSS) of 30V, and a continuous drain current (I<sub>D) of up to 55A at 25°C. With a gate-source voltage (V<sub>GS) of ±20V, it offers a gate threshold voltage (V<sub>GS(th)) in the range of 1.0V to 2.5V, which is indicative of its logic level control capability.

Package and Quality

This MOSFET comes in a plastic surface-mounted package, which is designed for high power dissipation and compactness. It is compliant with the EU RoHS directive, making it an environmentally friendly choice for manufacturers looking to create sustainable products. The PHD55N03LTA also meets the stringent quality standards expected from NXP, a leader in the semiconductor industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3419 $58.1230
415+ $0.2807 $116.4905
640+ $0.2714 $173.6960
880+ $0.2633 $231.7040
1,140+ $0.2541 $289.6740
1,525+ $0.2275 $346.9375
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Availability: 2,840 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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