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PHD96NQ03LT,118

Part No PHD96NQ03LT,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 75A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 26.7nC @ 5V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 4.95 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1087805-PHD96NQ03LT,118
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian PHD96NQ03LT,118 CAD Model

Description

The PHD96NQ03LT,118 is a cutting-edge MOSFET transistor designed and manufactured by NXP Semiconductors, a renowned leader in the semiconductor industry. This product is part of NXP's portfolio of TrenchMOS™ logic level FETs, which are known for their high-speed switching performance, low on-state resistance, and efficient power handling capabilities.

With its compact SOT-223 package, the PHD96NQ03LT,118 offers a space-saving solution for a wide range of applications. It is particularly well-suited for high-efficiency DC-DC converters, motor control circuits, and power management functions within the automotive, industrial, and consumer electronics sectors.

Key Features:

  • Low Threshold Voltage: The device features a low threshold voltage, making it compatible with logic-level drive signals and reducing the need for additional drive circuitry.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET can handle high-frequency operations with ease, contributing to the overall efficiency of the system.
  • Low On-State Resistance (R<sub>DS(on)): Minimizing power losses during operation, the PHD96NQ03LT,118 boasts a low on-state resistance, which is crucial for maintaining thermal performance and energy efficiency.
  • High Continuous Drain Current (I<sub>D): The device supports a high continuous drain current, allowing it to handle significant power levels without compromising reliability.
  • Robust Thermal Management: Thanks to its SOT-223 package, the PHD96NQ03LT,118 offers excellent thermal characteristics, ensuring stable performance even under high-temperature conditions.
  • Logic Level Compatible: It can be directly driven by logic-level voltages, simplifying circuit design and reducing component count.

Applications:

  • DC-DC Converters
  • Motor Control Systems
  • Power Management Modules
  • Automotive Electronics
  • Switch Mode Power Supplies (SMPS)
  • Load Switching

NXP's PHD96NQ03LT,118 MOSFET is a testament to the company's commitment to providing innovative and reliable semiconductor solutions. Its performance and efficiency make it an ideal choice for designers looking to optimize their power circuitry in a variety of demanding applications.

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