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PHK24NQ04LT,518

Part No PHK24NQ04LT,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 21.2A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 21.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2985pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1087814-PHK24NQ04LT,518
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHK24NQ04LT,518 CAD Model

Description

The PHK24NQ04LT,518 is a high-performance, low-threshold N-channel TrenchMOS™ logic level FET manufactured by NXP Semiconductors. This field-effect transistor is designed for use in a wide range of applications, from power management to switching circuits, offering designers a versatile component with excellent efficiency.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it compatible with logic level drive signals and suitable for various digital applications.
  • High-Speed Switching: With its TrenchMOS technology, the PHK24NQ04LT,518 ensures high-speed switching performance, which is crucial for efficient power regulation and conversion.
  • Reduced Power Dissipation: The low on-state resistance (R<sub>DS(on)) minimizes power loss during operation, contributing to energy savings and reduced heat generation.
  • Robust Thermal Performance: The device's design and materials ensure excellent thermal performance, allowing for reliable operation even under high-temperature conditions.

Applications

The PHK24NQ04LT,518 is suitable for a variety of applications, including but not limited to:

  • DC/DC converters
  • Power management circuits
  • Motor drives
  • Load switching
  • Battery management systems

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 40V Continuous Drain Current (I<sub>D) 24A Power Dissipation (P<sub>D) 83W Operating Temperature Range -55°C to +175°C

With its robust design and reliable performance, the PHK24NQ04LT,518 from NXP is an excellent choice for engineers and designers looking for a high-quality, logic level power MOSFET. Its advanced features ensure it can meet the demands of modern electronic systems, providing both efficiency and versatility.

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