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PHM18NQ15T,518

Part No PHM18NQ15T,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 19A 8HVSON / N-Channel 150 V 19A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HVSON (5x6)
Package / Case 8-VDFN Exposed Pad
Base Product Number PHM18
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346465-PHM18NQ15T,518
Ultra Librarian 3D Model Ultra Librarian PHM18NQ15T,518 CAD Model

Description

The PHM18NQ15T,518 is a state-of-the-art MOSFET transistor designed by NXP Semiconductors, a leader in the electronics industry. This device is tailored for high-efficiency power management tasks and is well-suited for a variety of applications, including switch-mode power supplies (SMPS), power conversion, motor drives, and other power-intensive functions.

Key Features:

  • Low On-Resistance: The transistor features a low on-state resistance, which reduces power loss and improves efficiency in electronic circuits.
  • High-Speed Switching: Designed for high-speed switching applications, the PHM18NQ15T,518 allows for quicker transitions and reduced switching losses.
  • Advanced TrenchMOS Technology: Utilizing NXP's innovative TrenchMOS technology, this MOSFET provides superior performance with lower gate charge and capacitance.
  • Thermal Management: With an excellent thermal performance, the device can handle high temperatures, ensuring reliability and longevity in harsh conditions.
  • Robust Package: Encapsulated in a surface-mount package, it is designed for automated assembly processes, providing ease of integration into various circuit designs.

Specifications:

Parameter Value
Drain-Source Voltage (VDS) 150V
Continuous Drain Current (ID) 18A
Power Dissipation (PD) 48W
RDS(on) 150 mΩ
Operating Temperature Range -55°C to +175°C

Whether you are designing power supplies or looking to improve the efficiency of your current applications, the PHM18NQ15T,518 from NXP Semiconductors offers the performance and reliability required for today's demanding electronic environments. Its combination of high-speed switching, low on-resistance, and advanced thermal properties make it an excellent choice for designers looking to optimize their power management systems.

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