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PHM30NQ10T,518

Part No PHM30NQ10T,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 37.6A 8HVSON
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 37.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 53.7nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HVSON (6x5)
Dimension 8-VDFN Exposed Pad
Win Source Part Number 1087820-PHM30NQ10T,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHM30NQ10T,518 CAD Model

Description

The PHM30NQ10T,518 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance component is engineered to meet the rigorous demands of modern electronic circuits, providing efficient power management and signal processing capabilities to a wide array of applications.

Key Features:

  • Device Type: TrenchMOS™ Standard Level FET
  • Package: DPAK (TO-252); a surface-mounted, medium power package with low thermal resistance, suitable for high switching speeds and high-performance circuits.
  • Drain-Source Voltage (V<sub>DS): 100V; offering a robust breakdown voltage suitable for applications requiring high voltage operation.
  • Continuous Drain Current (I<sub>D): 30A; capable of handling significant current for power-intensive operations.
  • Low R<sub>DS(on): Very low on-state resistance minimizes conduction losses and improves overall efficiency.
  • Gate Charge (Q<sub>g): Optimized for low gate charge, which enhances the switching performance and reduces power consumption.
  • High-Speed Switching: Designed for fast switching applications, contributing to reduced switching losses and improved power efficiency.
  • Temperature Range: Operable over a wide temperature range, ensuring reliability and performance stability under varying environmental conditions.

Applications:

The PHM30NQ10T,518 MOSFET is ideal for a broad spectrum of applications, including:

  • Power supplies and DC-DC converters
  • Motor drives and controllers
  • Automotive systems and components
  • Switch mode power supplies (SMPS)
  • Power management in computing and telecommunications

Quality and Reliability:

NXP Semiconductors is committed to delivering high-quality products. The PHM30NQ10T,518 MOSFET is produced with rigorous quality control processes and is designed for long-term reliability in a variety of working conditions, ensuring that it meets the stringent requirements of the electronics industry.

With its combination of performance, efficiency, and reliability, the PHM30NQ10T,518 from NXP is an excellent choice for designers looking to optimize their power management and signal processing systems.

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