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PHP101NQ03LT,127

Part No PHP101NQ03LT,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 23nC @ 5V
Max Input Capacitance 2180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 166W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1087822-PHP101NQ03LT,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian PHP101NQ03LT,127 CAD Model

Description

The PHP101NQ03LT,127 is a cutting-edge MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from the renowned semiconductor manufacturer, NXP Semiconductors. This high-performance component is designed for a wide array of applications, particularly excelling in fast-switching environments. It is a preferred choice for engineers and designers who require a reliable and efficient power management solution.

The device features a low threshold voltage, making it suitable for low voltage applications that demand minimal power loss. Its low on-state resistance (R<sub>DS(on)) ensures high efficiency, which is critical for reducing heat generation and improving the overall lifespan of the product it is used in. The PHP101NQ03LT,127 is optimized for fast switching, offering improved performance in circuits where rapid on-off cycles are necessary.

Constructed with TrenchMOS™ technology, this MOSFET is part of NXP's portfolio of advanced power management solutions. TrenchMOS™ is known for its ability to provide a high current capacity while maintaining a compact form factor, making it an ideal choice for space-constrained applications. The PHP101NQ03LT,127 is encapsulated in a TO-220 package, which is widely used in the industry for its ease of mounting and excellent thermal and electrical characteristics.

With its robust design, the PHP101NQ03LT,127 is capable of withstanding high energy pulses in the avalanche and commutation modes, which is essential for applications that may experience unexpected voltage spikes. Furthermore, the device features gate charge optimization, which contributes to its efficient switching performance and reduces power losses.

The PHP101NQ03LT,127 is versatile enough to be used in a variety of applications, including but not limited to, DC/DC converters, motor drives, power management systems, and automotive applications. Its reliability and efficiency make it an excellent choice for designers looking to optimize their power systems without compromising on performance or durability.

In summary, the PHP101NQ03LT,127 from NXP Semiconductors represents a blend of advanced technology, high efficiency, and robust design, making it a top-tier component for any power management or fast-switching application.

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