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MCH3109-TL-E

Part No MCH3109-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 3A MCPH3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP 30 V 3 A 380MHz 800 mW Surface Mount 3-MCPH
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range 150°C (TJ)
Mounting Surface Mount
Package SC-70, SOT-323
Case / Package 3-MCPH
Family Name MCH3109
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number MCH3109-TL-E-ND, MCH3109-TL-EOSTR, MCH3109-TL-EOSDKR, MCH3109-TL-EOSCT
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 883964-MCH3109-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH3109-TL-E CAD Model

Description

ON Semiconductor MCH3109-TL-E N-Channel MOSFET

The MCH3109-TL-E is a high-performance N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is designed to deliver efficient power management and is suitable for a wide range of applications, including switching power supplies, motor controls, and power management tasks within industrial, automotive, and consumer electronics sectors.

Key Features

  • Low On-Resistance: The MCH3109-TL-E boasts a low on-resistance, which reduces power losses and improves efficiency in high-current applications.
  • High-Speed Switching: It is designed for high-speed switching applications, which makes it ideal for use in power conversion and management systems.
  • High Reliability: ON Semiconductor's commitment to quality ensures that this MOSFET operates reliably over a wide temperature range and under various environmental conditions.
  • Low Drive Voltage: The device can be driven at low voltages, making it compatible with modern microcontrollers and logic-level devices.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DS): The maximum drain-source voltage is rated at 30V, which allows for a wide range of operations in different circuit designs.
  • Continuous Drain Current (I<sub>D): It supports a continuous drain current of up to 6A, providing substantial current handling capability for various applications.
  • Gate Threshold Voltage (V<sub>GS(th)): The gate threshold voltage is specified to ensure reliable switching performance.
  • Total Power Dissipation: The MOSFET is capable of dissipating power efficiently, thereby maintaining stability and longevity of the device.

Applications

The MCH3109-TL-E is versatile and can be used in a variety of applications. Its high-speed switching and low on-resistance make it particularly suitable for:

  • DC/DC converters
  • Power supply circuits
  • Motor drives and controllers
  • LED lighting solutions
  • Load switches
  • Battery management systems

With its robust design and ON Semiconductor's reputation for reliability, the MCH3109-TL-E N-Channel MOSFET is an excellent choice for designers looking to enhance power efficiency and performance in their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1526 $57.9880
925+ $0.1252 $115.8100
1,430+ $0.1214 $173.6020
1,970+ $0.1175 $231.4750
2,545+ $0.1136 $289.1120
3,410+ $0.1018 $347.1380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,560 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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