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PHT2NQ10T,135

Part No PHT2NQ10T,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.5A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 5.1nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 1.75A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1087844-PHT2NQ10T,135
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHT2NQ10T,135 CAD Model

Description

The PHT2NQ10T,135 is a robust, high-performance N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-quality semiconductor products. This particular MOSFET is well-suited for a wide range of applications, including but not limited to, switch mode power supplies (SMPS), DC-DC converters, motor control circuits, and general-purpose switching applications.

Key Features

  • Low Threshold Voltage: The device operates at a low threshold voltage, making it ideal for low voltage applications that require efficient power management.
  • High-Speed Switching: Designed for fast switching, the PHT2NQ10T,135 ensures minimal losses and is suitable for high-frequency circuits.
  • Low On-Resistance (R<sub>DS(on)): This MOSFET offers a low on-state resistance, which translates to reduced power losses and improved overall efficiency in applications.
  • Enhanced Thermal Performance: With its excellent thermal characteristics, the product can handle higher currents and operate at elevated temperatures without performance degradation.
  • Logic Level Compatible: It can be driven directly from logic-level voltages, simplifying the drive circuitry in digital applications.

Applications

The versatility of the PHT2NQ10T,135 MOSFET makes it an excellent choice for a variety of electronic applications. It is particularly well-suited for:

  • Power management in portable and battery-powered devices
  • Load switching in industrial control systems
  • Automotive electronics where energy efficiency is crucial
  • High-performance computing and server power supplies

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PHT2NQ10T,135 is produced with stringent quality control measures, ensuring reliable performance and longevity in the field. It is designed to meet or exceed industry standards for performance and reliability, making it a trusted choice for engineers and product designers.

Environmental Compliance

In line with NXP's dedication to environmental stewardship, the PHT2NQ10T,135 complies with various environmental regulations, including RoHS and REACH. This commitment ensures that the product is not only high-performing but also environmentally conscious, reducing the ecological footprint of the devices it powers.

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