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PMN38EN,165

Part No PMN38EN,165
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.4A 6TSOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 6.1nC @ 4.5V
Max Input Capacitance 495pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.75W (Tc)
Maximum Rds On at Id,Vgs 38 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 096293-PMN38EN,165
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN38EN,165 CAD Model

Description

The PMN38EN,165 is a cutting-edge, high-performance MOSFET brought to you by NXP Semiconductors, a leader in the field of advanced electronic components. This product is a testament to NXP's commitment to providing innovative solutions that drive efficiency and reliability in electronic systems across a wide range of applications.

Key Features

  • Low On-Resistance: The PMN38EN,165 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET is capable of operating at high frequencies, making it ideal for power management and conversion tasks.
  • Thermal Management: With an enhanced thermal profile, the PMN38EN,165 is capable of handling higher currents and dissipating heat more effectively, ensuring longevity and stable performance.
  • Compact Footprint: The small size of the PMN38EN,165 makes it a perfect fit for space-constrained applications, allowing designers to minimize PCB size without compromising on power or performance.
  • Robustness: Engineered to withstand harsh conditions, this MOSFET is characterized by its ruggedness and ability to perform reliably in extreme environments.

Applications

The versatility of the PMN38EN,165 MOSFET enables its use in a diverse array of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Battery management systems
  • Load switches

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 20A Power Dissipation (P<sub>D) 25W Operating Temperature Range -55°C to 150°C

In conclusion, the PMN38EN,165 from NXP Semiconductors is an exceptional choice for designers looking for a MOSFET that offers high efficiency, fast switching, and a compact form factor, all while maintaining robust performance in demanding conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 493,200 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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