The PMV170UN,215 is a high-performance, N-channel Trench MOSFET designed and manufactured by NXP Semiconductors. This MOSFET is an ideal choice for a broad range of applications due to its low threshold voltage, high energy efficiency, and compact SOT-23 package. It is particularly well-suited for portable and battery-powered devices where power conservation is critical.

Key Features

• Low Threshold Voltage: The PMV170UN,215 boasts a low threshold voltage, which ensures that it can be easily driven by low-voltage control signals, making it suitable for low-power applications and logic-level gate drive circuits.
• High Efficiency: With its low on-state resistance (R<sub>DS(on)), this MOSFET minimizes power losses and improves overall energy efficiency, which is crucial for extending battery life in portable devices.
• Compact Footprint: Housed in a small SOT-23 package, the PMV170UN,215 is designed for space-constrained applications, enabling designers to reduce the size of their PCBs without sacrificing performance.
• Durable and Reliable: NXP's commitment to quality ensures that this MOSFET provides reliable performance and durability, even under challenging conditions.

Applications

The versatility of the PMV170UN,215 makes it an excellent choice for a wide array of applications, including but not limited to:

• Power management circuits
• Load switches
• Battery management systems
• DC/DC converters
• Motor control circuits
• Portable electronic devices

Technical Specifications

Parameter Value Package SOT-23 Drain-Source Voltage (V<sub>DS) 20V Continuous Drain Current (I<sub>D) 1.4A Power Dissipation (P<sub>D) 0.35W R<sub>DS(on) 300 mΩ at V<sub>GS = 4.5V

Conclusion

The PMV170UN,215 is a testament to NXP's innovation in the field of power MOSFET technology. Its combination of low threshold voltage, high efficiency, compact size, and reliability makes it a top choice for engineers and designers looking to optimize their power-sensitive applications.