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PSMN009-100P,127

Part No PSMN009-100P,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 156nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210274-PSMN009-100P,127
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN009-100P,127 CAD Model

Description

Introducing the PSMN009-100P,127 MOSFET from NXP Semiconductors

The PSMN009-100P,127 is a high-performance, N-channel enhancement-mode Field Effect Transistor (FET) designed by NXP Semiconductors, a leader in providing innovative and reliable semiconductor solutions. This MOSFET is part of NXP's portfolio of power management devices, crafted to deliver efficient and robust performance for a wide range of applications.

Key Features

  • Low On-Resistance: The PSMN009-100P,127 features an extremely low on-state resistance (R<sub>DS(on)) of just 9 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved power efficiency.
  • High Continuous Current: It is capable of handling a high continuous drain current (I<sub>D) up to 100 A, making it suitable for high-power applications.
  • Advanced Technology: Utilizing NXP's advanced TrenchMOS™ technology, this MOSFET offers superior performance with enhanced switching speeds and thermal stability.
  • Improved Thermal Performance: The device comes in a TO-220 package, known for its excellent thermal performance, ensuring reliable operation even under high power and temperature conditions.

Applications

The PSMN009-100P,127 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power supplies for servers, telecom, and datacom
  • Motor drives
  • Battery management systems
  • Automotive applications

Reliability and Quality

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN009-100P,127 is no exception, as it undergoes rigorous testing and quality control processes to ensure it performs to specifications under various conditions. This MOSFET is RoHS compliant, demonstrating NXP's dedication to environmental sustainability.

Conclusion

Whether you are designing power management systems for industrial, automotive, or consumer electronics, the PSMN009-100P,127 from NXP Semiconductors offers the efficiency, reliability, and high performance required to meet your needs. With its advanced features and robust design, this MOSFET is an excellent choice for engineers looking to enhance the power handling capabilities of their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0178 $60.5340
70+ $1.6551 $115.8570
110+ $1.6043 $176.4730
150+ $1.5523 $232.8450
195+ $1.5003 $292.5585
260+ $1.3456 $349.8560
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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