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PSMN015-100P,127

Part No PSMN015-100P,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 4900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 062144-PSMN015-100P,127
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN015-100P,127 CAD Model

Description

The PSMN015-100P,127 is a high-performance N-channel MOSFET brought to you by NXP Semiconductors, a leader in the field of high-quality electronic components. This particular MOSFET is designed to deliver excellent power efficiency and reliability, making it an ideal choice for a wide range of applications including power supplies, motor controls, and high-speed switching circuits.

Key Features

  • Low On-Resistance: The PSMN015-100P,127 boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its overall efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of 100A, this MOSFET can handle high current applications with ease.
  • High-Speed Switching: Its fast switching performance is suitable for high-frequency operations, ensuring that the device can be used in advanced power conversion systems.
  • Robust Thermal Performance: The MOSFET is encapsulated in a TO-220 package, which provides excellent thermal management and ensures stable operation even under high temperature conditions.
  • 100V Drain-Source Voltage: The device supports a maximum drain-source voltage (V<sub>DS) of 100V, making it suitable for a variety of medium to high voltage applications.

Applications

The versatility of the PSMN015-100P,127 MOSFET makes it a great component for various electronic designs. It is commonly used in:

  • DC/DC converters
  • Switch Mode Power Supplies (SMPS)
  • Power management systems
  • Motor drives and inverters
  • Automotive applications and more

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN015-100P,127 MOSFET is no exception, providing designers with a robust and durable component that they can depend on for their critical applications. With its excellent performance characteristics and the backing of NXP's reputation, this MOSFET is an excellent choice for your next design project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.3907 $50.2047
45+ $2.2394 $100.7730
70+ $2.1637 $151.4590
100+ $2.0124 $201.2400
130+ $1.9367 $251.7710
162+ $1.8611 $301.4982
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 180 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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