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Same model may have multiple batches, images only for reference.
SQJ840EP-T1_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQJ840EP-T1_GE3

Part No SQJ840EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A PPAK SO-8
Datasheet
SQJ840EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 10.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1101739-SQJ840EP-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQJ840EP-T1_GE3 CAD Model

Description

The Vishay SQJ840EP-T1_GE3 is a high-quality N-channel MOSFET designed for use in discrete semiconductor products.

  • Application: Discrete Semiconductor Products
  • Mounting: SMD
  • Packaging: Reel
  • Power Dissipation: 46W (Tc) (Max)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 30A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Gate Charge: 38nC @ 10V (max)
  • Rds on @ Id,Vgs: 9.3 mOhm @ 10.3A, 10V (max)
  • Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1885 $59.4250
120+ $0.9753 $117.0360
185+ $0.9448 $174.7880
255+ $0.9143 $233.1465
330+ $0.8838 $291.6540
440+ $0.7923 $348.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,813 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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