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PSMN016-100YS,115

Part No PSMN016-100YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2744pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 117W (Tc)
Maximum Rds On at Id,Vgs 16.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 141021-PSMN016-100YS,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN016-100YS,115 CAD Model

Description

Product Overview: PSMN016-100YS,115

The PSMN016-100YS,115 is a high-performance N-channel MOSFET brought to you by NXP Semiconductors, a leader in the industry known for its innovative and reliable products. This MOSFET is designed to deliver efficient power management and conversion for a wide range of applications, ensuring robust performance and energy savings.

Key Features

  • Low On-Resistance: The PSMN016-100YS,115 features a very low on-resistance (R<sub>DS(on)) of just 16 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency in your circuit designs.
  • High Continuous Current: It is capable of handling a continuous drain current (I<sub>D) of up to 100 A, making it suitable for high-power applications.
  • High-Speed Switching: This MOSFET provides fast switching performance, which is beneficial for applications requiring high-speed operation such as switching regulators, converters, and power amplifiers.
  • Enhanced Thermal Performance: The device comes in a compact LFPAK56 (Power-SO8) package that offers excellent thermal performance thanks to its exposed die attach pad, allowing for effective heat dissipation.
  • 100% Avalanche Tested: Ensuring reliability, each unit is rigorously tested for avalanche energy capability, providing an additional layer of protection against unexpected voltage spikes.

Applications

The versatility of the PSMN016-100YS,115 MOSFET makes it ideal for a variety of applications, including:

  • DC/DC converters and DC/AC inverters
  • Motor drives and controllers
  • Power supply units for servers, telecom, and datacom
  • Automotive systems and battery management
  • Power management for computing and consumer electronics

Quality and Reliability

NXP's commitment to quality and reliability is evident in the PSMN016-100YS,115 MOSFET. With its advanced silicon technology and rigorous testing protocols, this MOSFET is designed to meet the stringent requirements of the industry and provide a long operational lifespan.

Whether you are designing power systems for industrial, automotive, or consumer electronics, the PSMN016-100YS,115 from NXP is a solid choice that offers high efficiency, durability, and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0782 $59.3010
115+ $1.0087 $116.0005
180+ $0.9739 $175.3020
260+ $0.9044 $235.1440
335+ $0.8696 $291.3160
420+ $0.8348 $350.6160
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,401 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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