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PSMN0R9-25YLC,115

Part No PSMN0R9-25YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6775pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 0.99 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 110029-PSMN0R9-25YLC,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN0R9-25YLC,115 CAD Model

Description

Introducing the PSMN0R9-25YLC,115 MOSFET from NXP Semiconductors

The PSMN0R9-25YLC,115 is a cutting-edge N-channel enhancement-mode Field-Effect Transistor (FET) from the renowned semiconductor manufacturer, NXP. This high-performance MOSFET is designed to deliver efficient power conversion with a low on-state resistance, making it an ideal choice for a wide range of applications, including DC-DC converters, motor drives, and power management systems.

Key Features

  • Low RDS(on): This MOSFET boasts an extremely low on-state resistance of just 0.9 milliohms at a gate drive of 10V, ensuring minimal power loss and improved efficiency in your circuits.
  • High Continuous Drain Current: With a continuous drain current of 100A, the PSMN0R9-25YLC,115 is capable of handling high current loads, making it suitable for demanding power applications.
  • 25V Drain-Source Voltage: The device can sustain a maximum drain-source voltage of 25V, providing a good balance between performance and reliability for most low to medium voltage applications.
  • Logic Level Gate Drive: It can be driven by logic-level voltages, simplifying the design of the driving circuitry and broadening the range of compatible controllers and drivers.

Advanced Technology

The PSMN0R9-25YLC,115 utilizes NXP's latest TrenchMOS™ silicon technology, which is renowned for its superior switching performance and reliability. This technology ensures that the MOSFET operates with high efficiency, fast switching speeds, and reduced gate charge, which are critical for modern high-speed power switching applications.

Thermal Management

Encased in a compact LFPAK33 (Power-SO8) package, the PSMN0R9-25YLC,115 has an excellent thermal performance. The package design allows for a simplified heat sink integration or even operation without a heat sink in some applications, thanks to its low thermal resistance path from the die to the PCB.

Applications

With its robust performance characteristics, the PSMN0R9-25YLC,115 is a versatile component suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power distribution systems
  • High-efficiency DC-DC converters
  • Motor control circuits
  • Battery management systems
  • Load switches

Whether you are designing for industrial, automotive, or consumer electronics, the PSMN0R9-25YLC,115 by NXP Semiconductors offers the performance, efficiency, and reliability required for your power management and switching needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1162 $50.2290
110+ $0.9159 $100.7490
170+ $0.8873 $150.8410
235+ $0.8586 $201.7710
305+ $0.8300 $253.1500
405+ $0.7442 $301.4010
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Availability: 35,420 pieces
MOQ: 45 pcs
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