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PSMN2R0-30PL

Part No PSMN2R0-30PL
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 6810pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 211W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210287-PSMN2R0-30PL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN2R0-30PL CAD Model

Description

The PSMN2R0-30PL is a high-performance, enhancement-mode MOSFET brought to you by NXP Semiconductors, a leader in the field of high-quality semiconductor products. This particular MOSFET is designed to offer low on-state resistance and provide high switching performance, which makes it an ideal choice for a wide range of power management applications.

Key Features:

  • Low RDS(on): The PSMN2R0-30PL boasts an exceptionally low on-state resistance of just 2.0 mΩ, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (ID) of up to 100A, this MOSFET can handle high current applications with ease, ensuring reliable performance under demanding conditions.
  • 30V Drain-Source Voltage (VDS): The device is designed to operate effectively with a drain-source voltage of up to 30V, making it versatile for various circuit designs.
  • Enhanced Thermal Performance: The PSMN2R0-30PL features an optimized package design for improved heat dissipation, which contributes to its robust thermal performance and longevity.
  • Logic-Level Gate Drive: Its logic-level gate drive capability allows for direct driving from microcontrollers, simplifying circuit complexity and reducing component count.

Applications:

The PSMN2R0-30PL is suitable for a range of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Computing and server power supplies
  • Automotive systems
  • High-efficiency power conversion

Quality and Reliability:

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN2R0-30PL MOSFET is no exception, with rigorous testing and quality control measures in place to ensure consistent performance and durability. Engineers and designers can confidently incorporate this MOSFET into their designs, knowing that it will provide reliable operation in a variety of power switching applications.

Environmental Compliance:

Adhering to environmental standards, the PSMN2R0-30PL is RoHS compliant, minimizing the environmental impact by restricting the use of certain hazardous substances in its manufacture.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9913 $54.5215
125+ $0.8134 $101.6750
195+ $0.7880 $153.6600
265+ $0.7626 $202.0890
340+ $0.7372 $250.6480
455+ $0.6609 $300.7095
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 323 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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