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PSMN3R0-60PS

Part No PSMN3R0-60PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 8079pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 306W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 042232-PSMN3R0-60PS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN3R0-60PS CAD Model

Description

The PSMN3R0-60PS is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This MOSFET is part of NXP's NextPowerS3 portfolio, offering exceptional efficiency and power density for a wide range of applications. With a focus on energy-saving and sustainable technology, the PSMN3R0-60PS is a reliable choice for designers looking to optimize their power management systems.

Key Features

  • Low On-State Resistance: The PSMN3R0-60PS boasts an incredibly low on-state resistance (R<sub>DS(on)) of just 3.0 mΩ at V<sub>GS = 10V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 100A, making it suitable for high-power applications.
  • 60V Drain-Source Voltage: The device can handle a maximum drain-source voltage (V<sub>DSS) of 60V, providing a good safety margin for most low to medium voltage applications.
  • Fast Switching Performance: The MOSFET's fast switching capabilities enable efficient power conversion, which is critical for reducing switching losses in applications such as DC-DC converters and motor drives.
  • Robust Thermal Performance: With an excellent thermal design, the PSMN3R0-60PS can handle significant power without overheating, ensuring reliability and longevity.

Applications

The versatility of the PSMN3R0-60PS allows it to be used in a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • Power management circuits

Reliability and Quality

NXP Semiconductors is committed to delivering high-quality and reliable components. The PSMN3R0-60PS MOSFET is no exception and is manufactured to meet the stringent requirements of the industry, ensuring stable performance even in the most demanding environments.

Environmental Compliance

The PSMN3R0-60PS is compliant with RoHS and other environmental directives, reflecting NXP's dedication to environmental sustainability and the production of eco-friendly products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5879 $58.7900
240+ $0.4816 $115.5840
375+ $0.4666 $174.9750
515+ $0.4516 $232.5740
665+ $0.4366 $290.3390
885+ $0.3915 $346.4775
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,700 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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