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PSMN3R4-30PL

Part No PSMN3R4-30PL
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 3907pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 114W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210291-PSMN3R4-30PL
Family Name PSMN3R4-30PL
Introduction Date November 02, 2010
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN3R4-30PL CAD Model

Description

Product Overview: PSMN3R4-30PL MOSFET by NXP Semiconductors

The PSMN3R4-30PL is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This MOSFET utilizes NXP's latest TrenchMOS technology, which is renowned for providing low threshold voltage, high switching speed, and improved energy efficiency. It is designed to meet the rigorous demands of modern electronic circuits, offering a compact and power-efficient solution for a wide range of applications.

Key Features:

  • Low On-State Resistance: The PSMN3R4-30PL boasts an exceptionally low on-state resistance (R<sub>DS(on)) of just 3.4 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: This MOSFET can handle a continuous drain current (I<sub>D) of up to 100 A, making it suitable for high-power applications.
  • 30 V Drain-Source Voltage: With a maximum drain-source voltage (V<sub>DSS) of 30 V, it provides a good balance between breakdown voltage and low-voltage operation for a variety of uses.
  • Fast Switching Performance: The device's fast switching characteristics ensure minimal switching losses and are ideal for high-frequency power conversion systems.
  • Enhanced Thermal Performance: The PSMN3R4-30PL comes in a plastic package which is designed for increased heat dissipation, ensuring reliability even under high-temperature conditions.

Applications:

The versatility of the PSMN3R4-30PL MOSFET makes it an excellent choice for a broad range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Power management systems

Quality and Reliability:

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN3R4-30PL MOSFET is no exception, with rigorous testing and quality control measures in place to ensure consistent performance and durability across various conditions.

Whether you're designing power-efficient consumer electronics or robust industrial systems, the PSMN3R4-30PL from NXP provides a reliable and efficient solution for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6595 $59.3550
215+ $0.5417 $116.4655
335+ $0.5244 $175.6740
455+ $0.5082 $231.2310
590+ $0.4909 $289.6310
790+ $0.4401 $347.6790
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Availability: 2,820 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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