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PSMN4R0-40YS,115

Part No PSMN4R0-40YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2410pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 133517-PSMN4R0-40YS,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN4R0-40YS,115 CAD Model

Description

Introducing the PSMN4R0-40YS,115 MOSFET by NXP Semiconductors

The PSMN4R0-40YS,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a leader in the field of high-quality electronic components. This particular MOSFET is designed for a wide range of applications, offering a perfect blend of efficiency, reliability, and performance.

Key Features

  • Low On-Resistance: The PSMN4R0-40YS,115 features an extremely low on-resistance (R<sub>DS(on)) of only 4.0 mΩ, minimizing conduction losses and improving overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 120A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive tasks.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the device can be driven at lower voltages, which is beneficial for low-voltage applications and helps to reduce power consumption.
  • Robust Package: Enclosed in a TO-220 package, the PSMN4R0-40YS,115 is designed for optimal thermal and electrical performance, ensuring stability and durability even in demanding situations.

Applications

The versatility of the PSMN4R0-40YS,115 MOSFET makes it an ideal choice for a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching circuits

Technical Specifications

Here are some of the technical specifications for the PSMN4R0-40YS,115:

  • Drain-source voltage (V<sub>DS): 40V
  • Continuous drain current (I<sub>D): 120A
  • Power dissipation (P<sub>D): 214W
  • Operating temperature range: -55°C to +175°C
  • TO-220 package

Quality and Reliability

NXP Semiconductors is committed to providing products that meet the highest standards of quality and reliability. The PSMN4R0-40YS,115 MOSFET is no exception, manufactured using state-of-the-art technology and rigorous testing to ensure it performs to the expectations in various environments and applications.

Whether you're designing power systems for consumer electronics, automotive, or industrial applications, the PSMN4R0-40YS,115 from NXP is a choice that promises to deliver efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2535 $50.1400
100+ $1.0286 $102.8600
155+ $0.9964 $154.4420
210+ $0.9643 $202.5030
270+ $0.9321 $251.6670
360+ $0.8357 $300.8520
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,170 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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