Product Overview: PSMN4R3-100PS - NXP Semiconductors

The PSMN4R3-100PS is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) from the renowned semiconductor manufacturer NXP. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications requiring high power density and energy efficiency.

Key Features

• Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)) of 4.3 mΩ at V<sub>GS = 10 V, reducing conduction losses and improving overall efficiency.
• High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of 100 A, making it suitable for high current applications.
• High Power Dissipation: With a power dissipation of 357 W, this MOSFET can handle significant levels of power, suitable for demanding environments.
• 100V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 100V, providing a good safety margin for various applications.
• Fast Switching Performance: The PSMN4R3-100PS offers fast switching performance, which is crucial for reducing switching losses in power conversion systems.
• Enhanced Thermal Performance: Its package is optimized for improved thermal performance, ensuring reliability even under high temperature operations.

Applications

The PSMN4R3-100PS MOSFET is ideal for a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drives
• Power Management Systems
• Automotive Applications
• High-performance Computing

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN4R3-100PS is no exception, and it is manufactured to ensure performance consistency and longevity, making it a trusted choice for engineers and designers in various industries.