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PSMN7R0-30YLC,115

Part No PSMN7R0-30YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 61A LL LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1057pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 7.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 136080-PSMN7R0-30YLC,115
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1,500
Ultra Librarian 3D Model Ultra Librarian PSMN7R0-30YLC,115 CAD Model

Description

PSMN7R0-30YLC,115 - NXP Power MOSFET

The PSMN7R0-30YLC,115 is a high-performance Power MOSFET presented by NXP Semiconductors, designed to meet a wide range of applications requiring efficient power management and delivery. This MOSFET is a part of NXP's extensive portfolio of semiconductor solutions that are known for their reliability, efficiency, and cutting-edge technology.

With a V<sub>DS of 30V, the PSMN7R0-30YLC,115 is optimized for low voltage applications, providing a robust and efficient solution for power conversion and management. The device features an extremely low on-state resistance (R<sub>DS(on)) of just 7.0 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall system efficiency. This characteristic makes it particularly suitable for high-efficiency power supplies, DC-DC converters, motor control circuits, and a variety of other power-intensive applications.

Encased in a compact LFPAK33 package, the PSMN7R0-30YLC,115 is designed with a copper clip and solder die attach, which results in outstanding thermal performance. This allows for higher current carrying capacity and enhanced reliability even under strenuous conditions, ensuring stable operation over a wide temperature range.

The MOSFET also features fast switching performance, which is critical in reducing switching losses and improving the response time in various applications. This makes it an ideal choice for high-speed switching applications, where power efficiency and speed are paramount.

Additionally, the PSMN7R0-30YLC,115 is designed to be rugged and durable. It is capable of withstanding high energy pulses in the avalanche and commutation modes, which ensures that the device remains protected against unexpected voltage spikes and other electrical transients that could potentially cause damage.

With its combination of low on-resistance, high thermal performance, fast switching capabilities, and ruggedness, the PSMN7R0-30YLC,115 from NXP is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Whether it's being used in consumer electronics, automotive applications, or industrial systems, this Power MOSFET stands out as a dependable component in any power regulation or switching task.

For detailed specifications and application guidelines, designers and engineers are encouraged to consult the datasheet and support documentation provided by NXP Semiconductors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3703 $60.6654
42+ $2.7651 $116.1342
65+ $2.6784 $174.0960
90+ $2.5918 $233.2620
116+ $2.5064 $290.7424
155+ $2.2465 $348.2075
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 34,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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