PSMN9R0-30YL,115 - NXP MOSFET Overview

The PSMN9R0-30YL,115 is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This MOSFET is part of NXP's extensive range of energy-efficient power management devices and is designed to handle significant power levels and efficiency, making it suitable for a wide array of applications.

Key Features

• Low On-Resistance: The device features a very low on-state resistance (R<sub>DS(on)) of 9 mΩ at V<sub>GS = 10 V, reducing power loss and improving efficiency in applications.
• High Continuous Drain Current: It can support a continuous drain current (I<sub>D) up to 100 A, making it capable of handling high current loads.
• High-Speed Switching: With fast switching performance, the MOSFET is ideal for high-frequency applications.
• Robust Thermal Performance: The PSMN9R0-30YL,115 is encapsulated in a LFPAK56 (Power-SO8) package, which offers excellent thermal performance and a small footprint.

Applications

The versatility of the PSMN9R0-30YL,115 MOSFET makes it suitable for a broad spectrum of applications, including:

• DC/DC converters
• Motor drives
• Power management circuits
• Switching regulators
• Power supply units

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30 V Continuous Drain Current (I<sub>D) 100 A Power Dissipation (P<sub>D) 110 W Operating Temperature Range -55°C to +175°C Package LFPAK56 (Power-SO8)

The PSMN9R0-30YL,115 MOSFET by NXP is a reliable and durable choice for designers looking to balance performance with power efficiency. Its robust package design and superior thermal management capabilities make it an excellent selection for demanding power applications.