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PUML1

Part No PUML1
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description 50 V, 200 mA NPN general-purpose transistor/100 mA NPN resistor-equipped transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1240809-PUML1
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUML1 CAD Model

Description

The NXP PUML1 is a versatile dual PNP transistor housed in a small Surface-Mounted Device (SMD) package. Designed to deliver high performance in a compact form factor, the PUML1 is an excellent choice for a wide range of applications in the electronics industry.

Key Features

  • Dual PNP Transistors: The integrated dual transistors allow for reduced component count in circuit designs, enhancing reliability and simplifying PCB layout.
  • High Collector Current: With a high collector current capability, the PUML1 can handle significant loads, making it suitable for power management applications.
  • Low Saturation Voltage: The device exhibits low saturation voltage, which helps in reducing power loss and improving efficiency in switching applications.
  • Excellent HFE Linearity: The high linearity of the current gain (HFE) across a wide range of currents ensures consistent performance and simplifies circuit design.

Applications

The NXP PUML1 is designed for use in a variety of applications, including but not limited to:

  • Switching circuits
  • Amplification circuits
  • Power management solutions
  • Signal processing
  • Audio interfaces
  • Driver stages in audio amplifiers

Technical Specifications

Parameter Value Configuration Dual PNP Collector-Emitter Voltage (VCEO) 50V Collector Current (IC) 100mA Power Dissipation (Pd) 250mW DC Current Gain (hFE) 100 to 600 Transition Frequency (fT) 100MHz

With its robust electrical characteristics and compact SMD package, the NXP PUML1 is a reliable and efficient solution for designers looking to optimize their electronic designs. Its dual transistor configuration offers a space-saving alternative without compromising on performance, making it a preferred choice for modern, high-density circuit applications.

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