The 2N3904G is a highly versatile NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading manufacturer in the semiconductor industry. Known for its reliability and efficiency, this transistor is designed to suit a wide range of applications, making it a staple component in electronic circuits.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Package: TO-92, a commonly used package for transistors, ensuring easy integration into various circuit designs.
• Collector-Emitter Voltage (VCEO): 40V, providing a good range for many electronic applications.
• Collector-Base Voltage (VCBO): 60V, allowing for a wider range of voltage operations.
• Emitter-Base Voltage (VEBO): 6V, suitable for various signal processing tasks.
• Collector Current (IC): Up to 200mA, making it ideal for small signal amplification.
• Power Dissipation (PD): 625mW, ensuring the transistor can handle a moderate level of power without overheating.
• DC Current Gain (hFE): 100 to 300, providing a substantial amplification factor for electronic signals.
• Operating and Storage Junction Temperature Range: -55°C to +150°C, offering a wide temperature range for various environments.

Applications

The 2N3904G transistor is commonly used in general-purpose amplification and switching. Its applications include, but are not limited to:

• Signal amplification in audio devices
• Driver stages in hi-fi amplifiers and television circuits
• Switching loads in computing devices
• Interface circuits between microcontrollers and other peripherals
• DIY electronics and educational projects

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The 2N3904G transistor complies with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances such as lead, mercury, and cadmium. This compliance reflects ON Semiconductor's dedication to environmental sustainability and the health and safety of electronic consumers.