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2N4920G

Part No 2N4920G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 1A TO225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 600mV @ 100mA, 1A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 30 @ 500mA, 1V
Maximum Power Dissipation 30W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-225AA
Win Source Part Number 075331-2N4920G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N4920G CAD Model

Description

ON Semiconductor 2N4920G Bipolar Transistor

The 2N4920G is a high-quality bipolar junction transistor (BJT) from ON Semiconductor, a leading manufacturer in the semiconductor industry. This PNP transistor is designed for general-purpose amplifier and switching applications, providing a reliable solution for a wide range of electronic circuits.

Key Features

  • Type: PNP
  • Package: TO-225
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1A
  • Power Dissipation (Pd): 800 mW
  • DC Current Gain (hFE): 40 to 160
  • Operating and Storage Junction Temperature Range: -65 to +150°C

The 2N4920G features a TO-225 package, which is a compact and robust housing that ensures durability and long-term reliability. It is capable of withstanding a collector-emitter voltage of up to 80V and a collector-base voltage of the same magnitude, making it suitable for high voltage applications. Its emitter-base voltage is rated at 5V, which is standard for general-purpose transistors.

With a collector current rating of 1A, the 2N4920G can handle a moderate amount of current, which is sufficient for various amplifying tasks. Its power dissipation of 800 mW ensures that it can manage the heat generated during operation without compromising performance.

One of the critical parameters of a BJT is its current gain or hFE, and the 2N4920G offers a range of 40 to 160, providing flexibility in gain selection for different circuit designs. This parameter is crucial for applications where precise amplification is necessary.

The device operates over a wide temperature range from -65 to +150°C, making it suitable for use in environments with significant temperature variations. This temperature range also indicates the robustness of the 2N4920G, ensuring reliable operation even under harsh conditions.

In summary, the ON Semiconductor 2N4920G is a versatile and durable PNP transistor that offers excellent performance for general-purpose amplification and switching applications. Its electrical characteristics and thermal performance make it a popular choice among engineers and electronics enthusiasts alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5749 $51.7410
190+ $0.5379 $102.2010
290+ $0.5193 $150.5970
415+ $0.4822 $200.1130
540+ $0.4637 $250.3980
675+ $0.4451 $300.4425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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