The ON Semiconductor 2N4960 is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This versatile transistor is well-known for its reliable performance and robust construction, making it a preferred choice for a wide range of electronic circuits.

Key Features

• Voltage Ratings: The 2N4960 comes with a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -40V, and an emitter-base voltage (VEBO) of -5V. These ratings ensure that the device can handle moderate power applications with ease.
• Current Capacity: With a continuous collector current (IC) of -200mA, this transistor can drive a fair amount of current for its size, making it suitable for a variety of small to medium power applications.
• Power Dissipation: The device has a power dissipation (PD) of 625mW, which allows it to dissipate heat effectively during operation, ensuring stability and longevity.
• Gain Bandwidth Product: Featuring a transition frequency (fT) of 200MHz, the 2N4960 is capable of operating at high frequencies, which is beneficial for RF and high-speed switching applications.
• High hFE: The transistor has a high DC current gain (hFE) range, which means it can amplify a small input current into a much larger output current, a critical parameter in amplification circuits.

Applications

The 2N4960 is suitable for a broad spectrum of applications, including:

• Audio amplifiers and pre-amplifiers
• Signal processing
• Switching and regulation circuits
• Linear amplification
• Driver stages in hi-fi systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality components that meet rigorous industry standards. The 2N4960 is no exception, as it is manufactured with attention to detail to ensure consistent performance and durability. Whether you are designing consumer electronics or industrial systems, the 2N4960 is a reliable component that will help you achieve your design objectives.

For detailed specifications, application notes, and additional resources, please refer to the official ON Semiconductor datasheets and product documentation.