ON Semiconductor 2N5551G NPN Bipolar Transistor

The 2N5551G is a high-voltage NPN bipolar transistor that is widely recognized for its reliability and efficiency, designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This versatile component is suitable for a variety of applications, including amplifier and switching circuits where moderate power handling and amplification are needed.

Key Features

• Voltage Ratings: The 2N5551G boasts a collector-emitter voltage (VCEO) of 160V, which enables it to handle higher voltage applications efficiently.
• Current Handling: With a continuous collector current (IC) rating of 600mA, this transistor can control a significant amount of current, making it suitable for driving medium-power loads.
• Power Dissipation: It comes with a power dissipation (PD) of 625mW, allowing it to dissipate heat effectively during operation.
• High Gain Bandwidth Product: It features a transition frequency (fT) of 100MHz, which indicates a high gain bandwidth product, beneficial for high-frequency applications.
• TO-92 Package: Encased in a TO-92 package, the 2N5551G is designed for through-hole mounting, which makes it easy to install and replace in a variety of electronic circuits.

Applications

The 2N5551G is commonly used in:

• Audio amplifiers and pre-amplifiers
• Signal processing circuits
• Switching regulators
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor ensures that the 2N5551G meets the highest quality and reliability standards. The device is characterized for operation from -55°C to +150°C, providing a wide temperature range that guarantees stability across various environmental conditions. Additionally, it is compliant with RoHS regulations, ensuring that it meets global environmental standards and is free from hazardous substances.

Whether you are designing a new circuit or replacing a component in an existing one, the 2N5551G from ON Semiconductor is an excellent choice for a reliable and capable NPN bipolar transistor.