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2N5551RL1G

Part No 2N5551RL1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 005712-2N5551RL1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5551RL1G CAD Model

Description

Product Overview: 2N5551RL1G

The 2N5551RL1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, renowned for its reliability and efficiency in a wide array of electronic applications. This versatile transistor is designed to handle moderate power amplification and switching tasks with ease, making it a popular choice among engineers and electronics enthusiasts alike.

Key Features

  • Voltage & Current: It boasts a collector-emitter voltage (VCEO) of 160V, collector-base voltage (VCBO) of 180V, and emitter-base voltage (VEBO) of 6V. The collector current (IC) is rated at 600mA, suitable for a variety of medium-power requirements.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 100MHz, the 2N5551RL1G offers excellent high-frequency performance, making it ideal for amplification in RF applications.
  • Power Dissipation: This transistor is capable of dissipating up to 625mW of power, providing a good balance between power handling and size for many applications.
  • Package: The 2N5551RL1G is available in a TO-92 package, which is widely used and easy to work with, both in prototyping and in production environments.
  • RoHS Compliant: It adheres to the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in a wide range of commercial products.

Applications

The 2N5551RL1G is a versatile component that can be used in various applications, including:

  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Switching circuits
  • Driver stages in Hi-Fi amplifiers and television circuits
  • General-purpose amplification

Quality and Reliability

ON Semiconductor is committed to delivering high-quality components that meet the stringent requirements of the electronics industry. The 2N5551RL1G is manufactured with the company's advanced processes, ensuring both high performance and reliability for critical applications.

Conclusion

Whether for audio, RF, or general-purpose applications, the 2N5551RL1G from ON Semiconductor is an excellent choice for designers looking for a reliable and efficient NPN transistor. Its robust electrical characteristics and compliance with RoHS standards make it a sustainable and versatile component for a multitude of electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
485+ $0.1036 $50.2460
1,180+ $0.0851 $100.4180
1,825+ $0.0824 $150.3800
2,510+ $0.0797 $200.0470
3,245+ $0.0771 $250.1895
4,345+ $0.0691 $300.2395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,002 pieces
MOQ: 485 pcs
Order Increment : 1 pcs
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