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2N5551RLRAG

Part No 2N5551RLRAG
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A TO92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 118857-2N5551RLRAG
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian 2N5551RLRAG CAD Model

Description

ON Semiconductor 2N5551RLRAG Bipolar Transistor

The 2N5551RLRAG from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in energy-efficient electronics. This versatile transistor is ideal for a wide range of applications, including amplification and switching circuits, where reliable and consistent performance is crucial.

The 2N5551RLRAG boasts a collector-emitter voltage (VCEO) of 160V, which allows it to handle higher voltage applications with ease. Its collector current (IC) rating of 600mA makes it suitable for medium power applications. The device operates with a power dissipation of 625mW, providing a good balance between power handling and thermal efficiency.

One of the key features of the 2N5551RLRAG is its high DC current gain (hFE) range, which varies from 80 to 300 at a collector current of 10mA. This high gain ensures that the transistor can amplify weak signals effectively, making it an excellent choice for audio amplifiers, signal processing, and other sensitive electronic applications.

The device is housed in a TO-92 package, which is widely recognized for its compact size and ease of mounting on a printed circuit board (PCB). The TO-92 package also provides excellent isolation between the transistor and its surroundings, which is critical for maintaining device reliability and performance over time.

ON Semiconductor has designed the 2N5551RLRAG with a focus on quality and reliability. The transistor features a robust construction that can withstand the rigors of both commercial and industrial environments. It is also characterized by its low noise figure, which is essential for maintaining signal integrity in audio and RF applications.

In summary, the 2N5551RLRAG is a high-voltage, high-performance NPN transistor that provides designers with a reliable and efficient solution for a variety of electronic circuits. Its robust design, combined with ON Semiconductor's commitment to quality, makes it a preferred choice for engineers looking for a component that delivers consistent performance and long-term reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1617 $58.2120
870+ $0.1328 $115.5360
1,340+ $0.1294 $173.3960
1,855+ $0.1247 $231.3185
2,385+ $0.1213 $289.3005
3,195+ $0.1086 $346.9770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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