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2N5551RLRPG

Part No 2N5551RLRPG
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 075342-2N5551RLRPG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N5551RLRPG CAD Model

Description

ON Semiconductor 2N5551RLRPG NPN Bipolar Transistor

The 2N5551RLRPG is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is well-suited for a wide range of applications, including amplification and switching. It is commonly used in commercial and industrial electronic equipment, offering reliability and efficiency in various electronic circuits.

Key Features:

  • Voltage Ratings: The 2N5551RLRPG is capable of withstanding a collector-emitter voltage (VCEO) of up to 160V, making it suitable for high-voltage applications.
  • Current Capacity: It can handle continuous collector current (IC) up to 600 mA, allowing it to drive moderate loads.
  • Power Dissipation: This transistor can dissipate up to 625 mW of power, which is adequate for various medium-power applications.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 100 MHz, the 2N5551RLRPG offers excellent frequency response, making it ideal for amplification in RF circuits.
  • TO-92 Package: Enclosed in a versatile TO-92 package, it is easy to install in a wide range of PCB layouts and is suitable for through-hole mounting.

Product Specifications:

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage VCEO Max 160 V DC Collector/Base Gain (hfe) Min 80 Collector Current - Continuous IC 600 mA Power Dissipation (Pd) 625 mW Transition Frequency (fT) 100 MHz Operating Temperature Range -55°C to +150°C Mounting Type Through Hole Package / Case TO-92-3

The 2N5551RLRPG transistor from ON Semiconductor is a reliable choice for designers looking for a component that combines high voltage capability, sufficient current handling, and a robust package. Its high gain bandwidth product ensures that it can be used effectively in high-frequency signal processing applications, while its industry-standard TO-92 package ensures compatibility with a broad array of existing designs. Whether for use in amplifiers, switchers, or other electronic circuits, the 2N5551RLRPG stands out as a versatile and dependable component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
900+ $0.0644 $57.9600
2,185+ $0.0529 $115.5865
3,390+ $0.0512 $173.5680
4,665+ $0.0496 $231.3840
6,025+ $0.0480 $289.2000
8,065+ $0.0430 $346.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,370 pieces
MOQ: 900 pcs
Order Increment : 1 pcs
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