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2N5682

Part No 2N5682
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description SILICON NPN TRANSISTORS | NPN 120V 1A 10W /2N5680 COMPLMT
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 120V
Vce Saturation (Maximum) at Ib, Ic 1V at 50mA, 500mA
Current - Collector Cutoff (Maximum) 10μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 250mA, 2V
Maximum Power 1W
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Family Part Number 2N5682
Manufacturer Pack Quantity 200
MSL Level 1 (Unlimited)
Win Source Part Number 1124002-2N5682
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5682 CAD Model

Description

ON Semiconductor 2N5682 Bipolar Transistor

The 2N5682 from ON Semiconductor is a high-power bipolar NPN transistor designed to handle substantial power levels and high-efficiency applications. This transistor is widely recognized for its reliability and consistency, making it a popular choice among electronic designers and engineers for a variety of power amplification and switching tasks.

With its robust construction, the 2N5682 can handle collector currents up to 50A, making it suitable for demanding environments and applications. It is designed to operate at high voltages, with a collector-emitter voltage (VCEO) of 80V, ensuring that it can be used in circuits with higher operating voltages without the risk of breakdown or damage.

The device features a collector power dissipation of 300W, which allows it to manage significant amounts of power without overheating. This high power dissipation capability is achieved through the use of advanced semiconductor materials and ON Semiconductor's state-of-the-art manufacturing processes, which ensure efficient heat dissipation and thermal stability.

The 2N5682 also boasts a wide range of operating temperatures, from -65°C to +200°C, making it suitable for use in harsh environmental conditions. This wide temperature range ensures that the device will perform reliably whether it is used in commercial applications or in more demanding industrial settings.

Key Specifications:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage VCEO Max: 80V
  • Collector Current - Continuous: 50A
  • Total Device Dissipation: 300W
  • Operating Junction Temperature Range: -65°C to +200°C

Overall, the ON Semiconductor 2N5682 is a versatile and durable component that is well-suited for high power switching and amplification applications. Its high current handling, power dissipation, and wide operating temperature range make it an excellent choice for a variety of challenging electrical designs.

Whether you are working on power supplies, motor controls, or audio amplifiers, the 2N5682 provides the performance and reliability necessary to ensure that your projects are successful and long-lasting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5444 $59.8840
260+ $0.4468 $116.1680
405+ $0.4328 $175.2840
555+ $0.4188 $232.4340
715+ $0.4049 $289.5035
955+ $0.3629 $346.5695
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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