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JANS2N3439UA

Part No JANS2N3439UA
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 1A UA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Series Military, MIL-PRF-19500/368
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max) 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
Power - Max 800 mW
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package UA
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1378719-JANS2N3439UA
Ultra Librarian 3D Model Ultra Librarian JANS2N3439UA CAD Model

Description

Product Overview: JANS2N3439UA by Microchip Technology

The JANS2N3439UA is a high-quality, military-grade bipolar junction transistor (BJT) from Microchip Technology, renowned for its reliability and performance in demanding applications. This NPN transistor is specifically designed to meet the stringent requirements of aerospace and defense projects, ensuring operation under extreme environmental conditions.

Key Features

  • Voltage and Current Ratings: With a collector-emitter voltage (VCEO) of 140V and a collector current (IC) rating of up to 1A, the JANS2N3439UA is capable of handling moderate power levels in electronic circuits.
  • High-Frequency Performance: This device is optimized for high-speed switching, making it suitable for applications that require rapid signal amplification or modulation.
  • Robust Thermal Performance: Its maximum power dissipation (PD) of 800mW allows for efficient operation without overheating, aided by its metal can package which enhances thermal conductivity.
  • Radiation Hardened: As part of Microchip's military-grade product line, the JANS2N3439UA is designed to withstand radiation effects, ensuring stable performance in space and other high-radiation environments.
  • Quality and Reliability: This transistor meets the MIL-PRF-19500/437 specifications, reflecting its compliance with rigorous military standards for quality and reliability.
  • Hermetically Sealed Package: The unit is encapsulated in a hermetically sealed metal package, providing excellent protection against moisture and other environmental contaminants.

Applications

The JANS2N3439UA is ideal for a wide range of high-reliability applications, including:

  • Communication systems
  • Power regulation modules
  • Aerospace instrumentation
  • Defense electronics
  • Satellite and space technology

With its exceptional build quality and adherence to military standards, the JANS2N3439UA from Microchip Technology is a top-tier component for any project requiring a robust and reliable NPN transistor.

Ordering and Availability

For detailed ordering information and availability, please visit Microchip Technology's official website or contact authorized distributors. Ensure you are sourcing genuine components to guarantee the best performance and longevity for your critical applications.

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