The ON Semiconductor 2N5885G is a high-power Bipolar Junction Transistor (BJT) specifically designed to handle high current and voltage applications. This BJT is part of the high-reliability and performance series of power transistors from ON Semiconductor, a trusted name in electronic components.

Key Features

• Type: NPN
• Collector-Emitter Voltage (VCEO): 80V
• Collector-Base Voltage (VCBO): 120V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 25A
• Total Device Dissipation (Pd): 200W
• DC Current Gain (hFE): 20 to 70 at IC = 10A
• Operating Junction Temperature Range: -65°C to +200°C
• Package: TO-3

Applications

The 2N5885G is ideal for a wide range of applications due to its robust performance characteristics. It is commonly used in:

• Power amplification circuits
• Switching regulators
• Motor controls
• Power inverters
• Audio amplifiers

Quality and Reliability

ON Semiconductor ensures that the 2N5885G meets stringent quality standards. This transistor is built for reliability in tough conditions, making it suitable for commercial and industrial applications where consistent performance is key.

Environmental Compliance

The 2N5885G is a lead-free and RoHS compliant component, reflecting ON Semiconductor's commitment to environmental responsibility. Customers can use this transistor in their products with the confidence that it meets current international environmental standards.

Conclusion

With its robust power handling capabilities, the ON Semiconductor 2N5885G is a reliable choice for designers and engineers looking for a high-performance NPN transistor. Its wide range of applications and commitment to quality make it an essential component for power regulation and amplification needs.