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2SA1179N6-CPA-TB-E

Part No 2SA1179N6-CPA-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.15A CP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 1mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 075382-2SA1179N6-CPA-TB-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1179N6-CPA-TB-E CAD Model

Description

ON Semiconductor 2SA1179N6-CPA-TB-E PNP Transistor

The 2SA1179N6-CPA-TB-E is a high-quality PNP transistor manufactured by ON Semiconductor, a leader in the semiconductor industry. This particular component is designed for general-purpose amplification and switching applications, providing reliable performance in a wide array of electronic circuits. The device boasts a robust construction and is housed in a compact package, making it suitable for space-constrained applications.

Key Features

  • Transistor Type: PNP - This type of bipolar junction transistor is designed for use in the negative side of the circuit and is controlled by the flow of holes as charge carriers.
  • Collector-Emitter Voltage (Vceo): The transistor can withstand a maximum voltage when the collector and emitter are in an open circuit, ensuring stable operation under various conditions.
  • Collector-Base Voltage (Vcbo): This rating indicates the maximum voltage the device can tolerate between the collector and base, providing a measure of its breakdown voltage capability.
  • Emitter-Base Voltage (Vebo): The maximum voltage that can be applied between the emitter and base without causing damage, further contributing to the device's robustness.
  • Continuous Collector Current (Ic): Specifies the maximum current that can flow continuously through the collector of the transistor, which is crucial for determining the power handling capacity of the device.
  • Power Dissipation (Pd): Indicates the amount of power the transistor can dissipate without overheating, ensuring longevity and reliability during operation.
  • Operating and Storage Junction Temperature Range: Specifies the range of temperatures within which the transistor can safely operate and be stored, highlighting its resilience to thermal variations.
  • Package Type: The device comes in a surface-mount package, enabling easy integration into printed circuit boards (PCBs) and facilitating automated assembly processes.

The ON Semiconductor 2SA1179N6-CPA-TB-E PNP transistor is an excellent choice for designers and engineers seeking a reliable component for amplification and switching functions in their electronic designs. Its compact form factor, combined with the ability to handle significant voltage and current levels, makes it a versatile choice for a range of applications, from consumer electronics to industrial systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
695+ $0.0722 $50.1790
1,690+ $0.0593 $100.2170
2,615+ $0.0574 $150.1010
3,600+ $0.0556 $200.1600
4,660+ $0.0537 $250.2420
6,225+ $0.0482 $300.0450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,000 pieces
MOQ: 695 pcs
Order Increment : 1 pcs
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