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2SA1706T-AN

Part No 2SA1706T-AN
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 50V 2A 3NMP  /  Bipolar (BJT) Transistor PNP 50 V 2 A 150MHz 1 W Through Hole 3-NMP
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Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 1 W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case SC-71
Supplier Device Package 3-NMP
Base Product Number 2SA1706
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-2SA1706T-AN-ONTR-ND,ONSONS2SA1706T-AN,2156-2SA1706T-AN
Standard Package 2,500
Win Source Part Number 1111230-2SA1706T-AN
Ultra Librarian 3D Model Ultra Librarian 2SA1706T-AN CAD Model

Description

ON Semiconductor 2SA1706T-AN PNP Transistor

The 2SA1706T-AN from ON Semiconductor is a high-performance PNP transistor that offers excellent features for a wide range of applications. This bipolar junction transistor (BJT) is designed for use in power amplification and switching applications and is well-suited for industrial, commercial, and consumer electronics where reliability and efficiency are critical.

Key Features:

  • Voltage Ratings: The 2SA1706T-AN has a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V. These ratings ensure that the transistor can handle significant voltage levels without performance degradation.
  • Current Handling: With a continuous collector current (IC) of -2A, this transistor can manage moderate current loads, making it suitable for a variety of driving and amplifying functions.
  • Power Dissipation: The device is capable of dissipating up to 2W of power, which allows it to operate efficiently in circuits that require a moderate level of power handling capability.
  • High Gain Bandwidth Product: It features a high transition frequency (fT) of 120MHz, offering excellent performance for high-speed switching and amplification applications.
  • Mounting Type: The 2SA1706T-AN is available in a TO-92 package, which is a widely used and easily mountable package type for through-hole PCB applications.

Applications:

  • Audio frequency amplifier stages
  • Signal processing and conditioning
  • Power management circuits
  • Switching regulators
  • Motor control circuits

The 2SA1706T-AN transistor is recognized for its robustness and versatility, making it an ideal choice for designers who require a reliable PNP transistor for their electronic designs. ON Semiconductor's commitment to quality ensures that this component meets the stringent requirements of the electronics industry, providing a dependable solution for both new designs and replacements in existing circuits.

If you're looking for a PNP transistor that offers a combination of high-speed operation, power handling, and reliability, the 2SA1706T-AN from ON Semiconductor is an excellent choice that can meet the demands of your electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2710 $50.1350
450+ $0.2224 $100.0800
700+ $0.2154 $150.7800
960+ $0.2085 $200.1600
1,245+ $0.2015 $250.8675
1,665+ $0.1807 $300.8655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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