The Vishay SI4778DY-T1-E3 MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current of 8A @ 25°C.

• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 8A @ 25°C
• Maximum Rds On: 23 mOhm @ 7A and 10V gate-source voltage
• Maximum Gate-Source Voltage: +/-16V
• Gate-Source Threshold Voltage: 2.2V @ 250μA
• Maximum Gate Charge: 18nC @ 10V
• Maximum Input Capacitance: 680pF @ 13V
• Package: 8-SOIC package with a dimension of 0.154" and a width of 3.90mm
• Suitable for: Power management and DC-DC converters