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2SB1203S-TL-E

Part No 2SB1203S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 5A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 550mV @ 150mA, 3A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 005819-2SB1203S-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1203S-TL-E CAD Model

Description

ON Semiconductor 2SB1203S-TL-E PNP Transistor

The ON Semiconductor 2SB1203S-TL-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is well-suited for amplification and switching applications, offering a balance of good amplification factor and low voltage operation. It is commonly utilized in consumer electronics, power management systems, and signal processing circuits.

Key features of the 2SB1203S-TL-E include a collector-emitter voltage (VCEO) of -50V and a collector-base voltage (VCBO) of -60V, ensuring that it can handle moderate voltage levels in circuit designs. The transistor is capable of a collector current (IC) of up to -2A, making it suitable for driving moderate loads. Additionally, the power dissipation (PD) is rated at 1W, which provides a good balance between performance and thermal efficiency.

The device is housed in a compact SOT-23 package, which is widely preferred for surface-mount technology (SMT) due to its small footprint and ease of integration into PCB designs. This makes the 2SB1203S-TL-E an excellent choice for space-constrained applications where board real estate is at a premium.

ON Semiconductor has designed the 2SB1203S-TL-E with a high gain-bandwidth product, which ensures that the transistor can operate effectively at higher frequencies. This characteristic is particularly beneficial for applications such as RF amplification and fast-switching circuits. The high-speed switching capabilities of the 2SB1203S-TL-E also make it an ideal choice for power regulation circuits, where rapid response times are essential.

For reliability and performance, the 2SB1203S-TL-E is manufactured using ON Semiconductor's high-quality semiconductor processes. This ensures that each transistor delivers consistent performance and is able to withstand the demands of various operating environments. Designers can rely on the 2SB1203S-TL-E for its robustness and longevity, making it a trustworthy component for both commercial and industrial electronic systems.

In summary, the ON Semiconductor 2SB1203S-TL-E PNP transistor is a versatile and reliable component that is ideal for a range of applications requiring moderate power handling, fast switching, and efficient amplification. Its compact SOT-23 package and high-performance characteristics make it a valuable addition to any electronic design project.

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