Product Overview: 2SB817C by ON Semiconductor
The 2SB817C is a high-power PNP transistor manufactured by ON Semiconductor, renowned for its reliability and performance in a wide range of applications. This semiconductor device is designed to handle significant power levels, making it an ideal choice for audio amplification and switching applications that require high current and voltage capabilities.
Key Features
- High Power Dissipation: With an impressive power dissipation capability, the 2SB817C can handle continuous collector currents, ensuring stable operation in high-power circuits.
- High Collector-Emitter Voltage: The device supports a high V<sub>CEO rating, which allows it to operate efficiently in circuits with higher voltage requirements.
- Low Saturation Voltage: The low V<sub>CE(sat) of the 2SB817C minimizes power loss during operation, contributing to overall energy efficiency in the application.
- Complementary NPN Type Available: The 2SB817C can be paired with its complementary NPN type transistor for use in push-pull configurations, often found in high-fidelity audio amplifiers.
Applications
- Audio Power Amplifiers
- Power Supply Regulators
- DC-DC Converters
- Motor Control Circuits
Technical Specifications
Parameter
Value
Collector-Emitter Voltage (V<sub>CEO)
140 V
Collector Current (I<sub>C)
12 A
Power Dissipation (P<sub>C)
100 W
Collector-Emitter Saturation Voltage (V<sub>CE(sat))
Typically 1.5 V at I<sub>C=7 A
With its robust construction and superior thermal performance, the 2SB817C from ON Semiconductor is a dependable choice for designers looking to create efficient and powerful electronic systems. Its industry-standard packaging ensures compatibility with a wide range of PCB layouts, making it a versatile component for both new designs and replacements in existing applications.