The 2SC2228-E is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, renowned for its precision and reliability in electronic circuits. This component is designed to meet the stringent requirements of a wide range of applications, making it a versatile choice for designers and engineers.

Key Features:

• Voltage and Current: The 2SC2228-E offers a collector-emitter voltage (Vceo) of 120V, collector-base voltage (Vcbo) of 200V, and emitter-base voltage (Vebo) of 5V. It can handle a continuous collector current (Ic) of up to 50mA, making it suitable for moderate power applications.
• High Gain Bandwidth Product: With a transition frequency (fT) of 120MHz, this transistor is capable of operating at high frequencies, which is ideal for amplification and switching in RF applications.
• Low Saturation Voltage: The low Vce(sat) ensures efficient operation with minimal power loss, which is critical for power-sensitive designs.
• Thermal and Power Handling: The 2SC2228-E is encapsulated in a TO-92 package, which helps in heat dissipation and offers a good balance between thermal management and compactness.

Applications:

The 2SC2228-E is suitable for a variety of applications, including but not limited to:

• Audio frequency amplifier stages
• Low noise signal amplification
• Driver stages in Hi-Fi amplifiers and television circuits
• Switching and linear applications
• General purpose switching and amplification

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The 2SC2228-E transistor is manufactured to the highest standards, ensuring consistent performance and reliability for the lifetime of the component. Its robust construction is designed to withstand the rigors of both commercial and industrial environments.

Environmental Compliance:

The 2SC2228-E complies with RoHS and other environmental directives, reflecting ON Semiconductor's dedication to environmental sustainability and the production of eco-friendly products.